6inch 4H-SEMI Type SiC Substrate for AR Glasses
The 6-inch 4H-SEMI silicon carbide (4H-SiC) substrate is a wide-bandgap semiconductor material based on the hexagonal crystal structure (4H polytype), engineered for semi-insulating properties (resistivity ≥1×10⁷ Ω·cm). Fabricated via physical vapor transport (PVT) or liquid-phase epitaxy (LPE), it delivers 3.26 eV wide bandgap, 3.5 MV/cm breakdown field, 4.9 W/cm·K thermal conductivity, and high-frequency low-loss characteristics, making it ideal for extreme-environment applications such as 5G communications, RF devices, and aerospace electronics. Compared to silicon-based materials, it offers 10× higher breakdown field strength and 3× superior thermal conductivity, enabling stable operation across -200°C to 1,600°C, and serving as an optimal substrate for high-voltage, high-frequency, and high-power devices.
6 Inch 4H-SEMI SiC Substrate Key Features
1. Electrical Performance
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Wide Bandgap (3.26 eV): 6 inch 4H-SEMI SiC substrate withstands voltages exceeding 10 kV, suitable for high-voltage scenarios like smart grids and EV inverters.
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High Breakdown Field (3.5 MV/cm): 10× higher than silicon, minimizing leakage current and enhancing reliability.
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High Electron Mobility (900 cm²/V·s): 6 inch 4H-SEMI SiC substrate optimizes switching speed in RF devices, reducing conduction losses.
2. Thermal & Mechanical Properties
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High Thermal Conductivity (4.9 W/cm·K): 3× better heat dissipation than silicon, supporting extreme temperatures (-200°C to 1,600°C).
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High Hardness (Mohs 9.2): 6 inch 4H-SEMI SiC substrate resists wear, compatible with precision processes like CMP and dry etching.
3. Process Compatibility
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Low Micropipe Density (<1 cm⁻²): 6 inch 4H-SEMI SiC substrate minimizes lattice defects for superior epitaxial layer quality.
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Surface Flatness (Ra <0.2 nm): 6 inch 4H-SEMI SiC substrate ensures compatibility with lithography and thin-film deposition.
6 Inch 4H-SEMI SiC Substrate Core Applications
1. 5G Communications & RF Devices
- Millimeter-Wave RF Modules: 6 inch 4H-SEMI SiC substrate enables GaN-on-4H-SiC RF devices for 28 GHz+ bands, improving signal efficiency.
- Low-Loss Filters: 6 inch 4H-SEMI SiC substrate reduces signal attenuation, enhancing radar and communication sensitivity.
2. Electric Vehicles (EVs)
- High-Frequency Inverters: Compatible with 800V fast-charging platforms, reducing energy loss by >40%.
- Power MOSFETs: 6 inch 4H-SEMI SiC substrate cuts 80–90% conduction losses, extending driving range.
3. Aerospace & Defense
- Radiation-Hardened Devices: Replaces silicon components, prolonging satellite and rocket system lifespans (>100 Mrad tolerance).
- High-Power Radars: 6 inch 4H-SEMI SiC substrate leverages low-loss properties for enhanced detection precision.
4. Industrial & Energy Systems
- Solar Inverters: Boosts conversion efficiency by 1–3%, reducing volume by 40–60% for harsh environments.
- Smart Grids: 6 inch 4H-SEMI SiC substrate supports high-voltage DC transmission, minimizing heat dissipation and cooling needs.
6 Inch 4H-SEMI SiC Substrate Technical Parameter
| Crystal parameters |
| Type | 4H |
| Refractive index a | >2.6 @550nm |
| Absorptivity a | ≤0.5% @450-650nm |
MP transmittance a
(without anti-reflection conditions) | ≥66.5% |
| Haze a | ≤0.3% |
| Polymorphism a | None permitted |
| Microtube density | ≤0.5/cm² |
| Hexagonal void density | None permitted |
| Impurity Grain on Hexagonal a | None permitted |
| MP Inclusion a | None permitted |
| Mechanical parameters |
| Dia(inches) | 6 |
| Surface orientation | (0001)±0.3° |
| Notch reference edge | Notch |
| Notch orientation | <1-100>±2° |
| Notch angle | 90±5°/1° |
| Notch depth | 1 mm ±0.25 mm (-0 mm) |
| Surface treatment | C-Si side (CMP) |
| Wafer edge | Bevel |
| Surface roughness (AFM) | Ra≤0.2 nm
(5×5 µm scan area) |
| Thickness a (Tropel) | 500.0 µm ±25.0 µm |
| LTV (Tropel) | ≤2 µm |
| TTV a (Tropel) | ≤3 µm |
| Bow a (Tropel) | ≤5 µm |
| Warp a (Tropel) | <15 µm |
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